Ultra-low contact resistance metallization by a silicidation technology employing a silicon capping layer for protection against contamination

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 63-64

  Yamada, K ^a   Tomita, K ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONTAMINATION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); ION IMPLANTATION; LEAKAGE CURRENTS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; TANTALUM; THIN FILMS;

ION BEAM MIXING; REVERSE BIASED CURRENT; SILICIDATION TECHNOLOGY; SILICON CAPPING LAYER;

METALLIZING;

EID: 0028583844     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)