Pimod processing and electrical characterization of ferroelectric thin film capacitors for nonvolatile memories

Integrated Ferroelectrics

Volumn 5, Issue 1, 1994, Pages 13-18

  Huang, Charles H J ^a   Lin, He ^a   Rabson, Thomas A ^a  

^a RICE UNIVERSITY   (United States)

Author keywords

ferroelectrics; LiNbOl; MFS; MOD; PIMOD; polarization reversal; thin film

Indexed keywords

CAPACITORS; DATA STORAGE EQUIPMENT; DECOMPOSITION; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; FILM PREPARATION; HYSTERESIS; LITHIUM COMPOUNDS; LOW TEMPERATURE OPERATIONS; OPTICAL PROPERTIES; SILICON; THIN FILM DEVICES;

LITHIUM NIOBATE; NONVOLATILE MEMORIES; PHOTO INDUCED METALLORGANIC DECOMPOSITION; POLARIZATION REVERSAL;

THIN FILMS;

EID: 0028578360     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584589408018675     Document Type: Article

References (4)

1. T.A. Rabson and C.H.J. Huang, Proceedings ISIF 92 (1992).
2. R.W. Vest and G.M. Vest, Technical report, Purdue University (1990).
3. C.H.J. Huang and T.A. Rabson, IEEE Elec. Dev. Lett., 13, 609 (1992).
4. D.K. Schroder, “Semiconductor Material and Device Characterization,” John Wiley & Sons, 261 (1990).