VDMOS transistor model taking into account the thermoelectrical interactions

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 1, Issue , 1994, Pages 327-330

  Lallement, C ^a   Bouchakour, R ^a   Maurel, T ^a  

^a TELECOM PARISTECH   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC LOSSES; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; ELECTRONICS PACKAGING; HEAT LOSSES; MOS DEVICES; THERMAL EFFECTS; THERMOELECTRICITY; TRANSISTORS;

THERMAL NETWORK; THERMOELECTRIC INTERACTIONS; VDMOS TRANSISTOR MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 0028573593     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)