A simple method to control bipolar polysilicon emitter interfacial oxide

Journal of the Electrochemical Society

Volumn 141, Issue 11, 1994, Pages 3167-3172

  Parekh, N S ^a   Taylor, R V ^a   Massetti, D O ^a  

^a Silicon Systems Inc   (United States)

Author keywords

BiCMOS integrated circuits; bipolar integrated circuits; electrodes; oxygen compounds; silicon; thickness control interface structure

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; ELECTRIC CURRENTS; GAIN CONTROL; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDES; SEMICONDUCTING SILICON; THICKNESS CONTROL;

CURRENT GAIN; INTERFACIAL OXIDE; POLYSILICON EMITTERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0028550770     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2059296     Document Type: Article

References (10)

1. I. R. C. Post, et al., IEEE Trans. Electron Devices, ED-39, p. 1717 (1992).
2. G. L. Patton, et al., IEEE Trans. Electron Devices, ED-33, p. 1754 (1986).
3. F. Walczyk, et al., IEEE Bipolar Circuits and Tech. Mtg. Digest, p. 84 (1992).
4. F. Nouri and B. Schraf, IEEE Bipolar Circuits and Tech. Mtg. Digest, p. 88 (1992).
5. J. L. De Jong, et al., IEEE Bipolar Circuits and Tech. Mtg. Digest, p. 182 (1989).
6. J. P. Benedict, et al., Mater. Res. Soc. Proc., 254, 121 (1991).
7. A. K. Kapoor and D. J. Roulston, Polysilicon Emitter Bipolar Transistors, IEEE Press, New York (1989).
8. C. C. Ng and E. S. Yang, Int. Electron Devices Mtg. Technical Digest, p. 32 (1986).
9. A. A. Eltoukhy and D. J. Roulston, IEEE Trans. Electron Devices, ED-29, p. 1862 (1982).
10. T. Yamaguchi, et al., IEEE Trans. Electron Devices, ED-40, p. 1484 (1993).