Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium

Bulletin of Materials Science

Volumn 17, Issue 6, 1994, Pages 1057-1064

  Gurumurthy, Suma ^a   Rao, K S R K ^a   Sreedhar, A K ^a   Bhat, H L ^a   Sundersheshu, B ^a,b   Bagai, R K ^a,b   Kumar, Vikram ^a,b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

annealing; Cadmium telluride; indium doping; photoluminescence; stoichiometry

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; LOW TEMPERATURE PHENOMENA; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; STOICHIOMETRY; TELLURIUM; VACUUM APPLICATIONS;

ACCEPTOR; CADMIUM TELLURIDE; CONDUCTION BAND; INDIUM DOPING;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0028543019     PISSN: 02504707     EISSN: 09737669     Source Type: Journal    
DOI: 10.1007/BF02757582     Document Type: Article

References (26)

1. Characterization of the Transport Properties of Halogen-Doped CdTe Used for Gamma-Ray Detectors
2. Luminescence of Fe+-implanted CdTe
3. Shallow and deep acceptor states in CdTe
4. Effect of compensation on recombination into Si doped (Ga, Al)As