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Volumn 4, Issue 9, 1994, Pages
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Core level photoemission from (111)-type InAs surfaces
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BINDING ENERGY;
ELECTRON ENERGY LEVELS;
EMISSION SPECTROSCOPY;
GEOMETRY;
PHOTOEMISSION;
RELAXATION PROCESSES;
SEMICONDUCTING INDIUM COMPOUNDS;
ATOM LAYER DISPLACEMENT;
CORE LEVEL SHIFT;
SEMICONDUCTING INDIUM ARSENIDE;
SURFACES;
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EID: 0028542251
PISSN: 11554339
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1051/jp4:1994937 Document Type: Article |
Times cited : (10)
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References (12)
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