Epitaxial growth of highly crystalline and conductive nitride films by pulsed laser deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 33, Issue 11, 1994, Pages 6308-6311

  Lee, Myung Bok ^a   Kawasaki, Masashi ^a   Yoshimoto, Mamoru ^a   Kumagai, Masao ^a   Koinuma, Hideomi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; EXCIMER LASERS; LASER BEAMS; NITRIDES; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMODYNAMICS;

CRYSTALLINITY; EPITAXIAL THIN FILMS; FULL WIDTH AT HALF MAXIMUM; IMPURITY PHASE FORMATION; PULSED LASER; X RAY POLE FIGURE;

THIN FILMS;

EID: 0028539312     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)