An Epitaxial Emitter-Cap SiGe-Base Bipolar Technology Optimized for Liquid-Nitrogen Temperature Operation

IEEE Electron Device Letters

Volumn 15, Issue 11, 1994, Pages 472-474

  Cressler, John D ^a   Crabbé, Emmanuel F ^b   Comfort, James H ^b   Sun, Jack Y C ^b   Stork, Johannes M C ^b  

^a AUBURN UNIVERSITY   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYOGENIC LIQUIDS; ELECTRIC CURRENTS; EMITTER COUPLED LOGIC CIRCUITS; EPITAXIAL GROWTH; LOW TEMPERATURE OPERATIONS; OPTIMIZATION; PHOSPHORUS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

ARSENIC DOPED POLYSILICON EMITTER CONTACT; CURRENT GAIN; EPITAXIAL EMITTER CAP SILICON GERMANIUM BASE BIPOLAR TECHNOLOGY; LIQUID NITROGEN TEMPERATURE; PHOSPHORUS DOPED EPITAXIAL EMITTER CAP LAYER; UNLOADED CIRCUIT SPEED;

BIPOLAR TRANSISTORS;

EID: 0028538817     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.334671     Document Type: Article

References (10)

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