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Journal of the American Ceramic Society

Volumn 77, Issue 11, 1994, Pages 3000-3005

Control of Leakage Resistance in Pb(Zr,Ti)O3 Thin Films by Donor Doping

(3) Dimos, Dunne a,b Schwartz, Robert W a,b Lockwood, Steven J a,b

a SANDIA NATIONAL LABORATORIES (United States)

b ADVANCED MATERIALS LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; FILM PREPARATION; LANTHANUM; LEAD COMPOUNDS; NIOBIUM; THERMAL EFFECTS;

ACTIVATION ENERGY; LEAD ZIRCONATE TITANATE; LEAKAGE RESISTANCE; STOICHIOMETRY;

THIN FILMS;

EID: 0028538526 PISSN: 00027820 EISSN: 15512916 Source Type: Journal
DOI: 10.1111/j.1151-2916.1994.tb04536.x Document Type: Article

Times cited : (64)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.