Calculation of the energy levels in InAs GaAs quantum dots

Solid State Communications

Volumn 92, Issue 5, 1994, Pages 437-442

  Marzin, J Y ^a   Bastard, G ^b  

^a ORANGE LABS   (France)

^b ECOLE NORMALE SUPÉRIEURE   (France)

Author keywords

A: nanostructures; A: semiconductors; D: electronic structure; D: optical properties

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CALCULATIONS; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRUCTURE (COMPOSITION);

ENERGY RELAXATION RATE; NANOSTRUCTURE; QUANTUM DOT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028533154     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(94)90524-X     Document Type: Article

References (29)

1. Phys. Rv.
2. Growth of a (GaAs)n/(InAs)nSuperlattice Semiconductor by Molecular Beam Epitaxy
3. In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As
4. J.M. Gérard, in Confined Electrons and Photons: New Physics and Applications, (Edited by C. Weisbuch & E. Burstein), to be published by Plenum.