Chemical composition of Al2O3/InP metal-insulator-semiconductor interfaces improved by plasma and ultraviolet oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 33, Issue 10, 1994, Pages 5894-5896

  Matsuda, Tetsuro ^a   Yoshida, Haruhiko ^a   Nara, Naoki ^a   Niu, Hirohiko ^a   Kishino, Seigo ^a  

^a UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; COMPOSITION; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); OXIDATION; PLASMAS; SEMICONDUCTING INDIUM COMPOUNDS; SPUTTERING; STRUCTURE (COMPOSITION); ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ARGON ION SPUTTERING; CAPACITANCE VOLTAGE CURVE; DEPTH PROFILE; INDIUM PHOSPHIDE; METAL INSULATOR SEMICONDUCTOR DIODES; PLASMA OXIDATION; ULTRAVIOLET OXIDATION;

SEMICONDUCTOR DIODES;

EID: 0028531861     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)