1/f Noise Characterization of Base Current and Emitter Interfacial Oxide Breakup in n-p-n Polyemitter Bipolar Transistors

IEEE Electron Device Letters

Volumn 15, Issue 10, 1994, Pages 430-432

  Quon, D S ^a   Sonek, G J ^a   Li, G P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRON TUNNELING; EPITAXIAL GROWTH; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SPURIOUS SIGNAL NOISE;

BASE CURRENTS; EMITTER INTERFACIAL OXIDE BREAKUP; POLYEMITTER BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0028530385     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.320991     Document Type: Article

References (9)

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