Monolithically integrated silicon nMOS pin photoreceiver

Electronics Letters

Volumn 30, Issue 22, 1994, Pages 1887-1888

  He, Y S ^a   Garrett, L D ^a   Lee, K H ^a   Campbell, J C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

MOS integrated circuits; pin photodiodes; Preamplifiers; Silicon

Indexed keywords

AMPLIFIERS (ELECTRONIC); CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; IMPEDANCE MATCHING (ELECTRIC); LIGHT SOURCES; MOS DEVICES; MOSFET DEVICES; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING SILICON; SIGNAL RECEIVERS;

DEPLETION DEPTH; OPEN EYE OPERATION; OPTICAL RECEIVER; PIN PHOTORECEIVER; PREAMPLIFIER; RESPONSIVITY; SIGNAL PHOTOCURRENT;

OPTICAL COMMUNICATION EQUIPMENT;

EID: 0028526497     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19941268     Document Type: Article

References (2)

1. ABIDI, A.A.: ‘Gigahertz transresistance amplifiers in fine line NMOS’, IEEE J. Solid-State Circuits, 1984, SC-19, pp. 986–994
2. LIM, J.-W., TZENG, Y.C., CHUANG, H.L., and STONGE, S.A.: ‘A 3.3 V monolithic photodetector/CMOS preamplifier for 531 Mb/s optical data link applications’, IEEE Int. Solid-State Circuits Conf. Dig.Tech. Papers, 1993, pp. TA 6.1