Hot Carrier Induced Bipolar Transistor Degradation Due to Base Dopant Compensation by Hydrogen: Theory and Experiment

IEEE Transactions on Electron Devices

Volumn 41, Issue 10, 1994, Pages 1824-1830

  Quon, David ^a   Gopi, Paramesh K ^a   Sonek, Gregory J ^a   Li, G P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; HYDROGEN; INTERFACES (MATERIALS); MODELS;

BASE DOPANT COMPENSATION; FORWARD COLLECTOR CURRENT; SERIES BASE RESISTANCE;

HOT CARRIERS;

EID: 0028517967     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324594     Document Type: Article

References (32)

1. D. Burnett and C. Hu, “Modeling hot-carrier effects in polysilicon emitter bipolar transistors,” IEEE Trans. Electron Devices, vol. 35, pp. 2238–2244, 1988.
2. D. Burnett and C. Hu, “Hot carrier reliability of bipolar transistors,” in Proc. 28th Annu. Proc. Reliability Phys., 1990, pp. 164–169.
3. D. D. Tang and E. Hackbarth, “Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design,” IEEE Trans. Electron Devices, vol. 35, pp. 2101–2107, 1988.
4. A. McDonald, “Avalanche degradation of Hfe,” IEEE Trans. Electron Devices, vol. 17, pp. 871–878, 1970.
5. C. J. Varker, D. Pettengill, W. T. Shiau, and B. Reuss, “Hot carrier induced Hfe degradation in BiCMOS transistors,” in Proc. 30th Int. 1992, pp. 58–62. Reliability Phys.
6. S. P. Joshi, R. Lahri, and C. Lage, “Poly emitter bipolar hot carrier effects in an advanced BiCMOS technology" in Int. Electron Dev. Meet. Tech. Dig., pp. 182–185, 1987.
7. Y. Niitsu, K. Yamaura, H. Momose, and K. Maeguchi, “Anomalous current gain degradation in bipolar transistors,” in Proc. 29th Int. Reliability Phys. Symp., 1991, pp. 193–199.
8. M. L. Dreyer and J. Durec, “Low frequency 1/f noise and current gain degradation in BiCMOS n-p-n transistors,” in Proc. 30th Int. Reliability Phys. Symp., 1992, pp. 95–101.
9. Y. pp. Zhang and Q. Sun, “Correlation between 1/f noise and hfe long-term instability in silicon bipolar devices,” IEEE Trans. Electron Devices, vol. 38, 2540–2547, 1991.
10. J. C. Martin and G. Blasquez, “Reliability prediction of silicon bipolar transistors by means of noise measurements,” in Proc. 12th Int. Reliability Phys. Symp., pp. 54–57, 1974.
11. A. van der Ziel and H. Tong, “Low frequency noise predicts when a transistor will fail,” Electron., vol. 23, pp. 95–97, 1966.
12. A. K. Kapoor, C.-H. Lin, and S.-Y. Oh, “Effect of emitter-base reverse bias stress on high frequency parameters of bipolar transistors,” Proc. 29th Int. Reliability Phys. Symp., pp. 188–192, 1991.
13. J. Dunkley, G. Ganschow, D. Hannaman, J. Patterson, S. Willard, and P. Gopi, “Hot electron induced hydrogen compensation of boron doped silicon resulting from emitter-base breakdown,” in Int. Electron Dev. Meet. Tech. Dig., pp. 785–788, 1992.
14. P. K. Gopi, G. P. Li, G. J. Sonek, J. Dunkley, D. Hannaman, J. Patterson, and S. Willard, “A new degradation mechanism associated with hydrogen in bipolar transistors under hot carrier stress,”Appl. Phys. Lett., vol. 63, pp. 1237–1239, 1993.
15. C. T. Sah, J. Y. C. Sun, and J. J. Tzou, “Generation-annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon,” J. Appl. Phys. vol. 54, pp. 944—956, 1983.
16. C. T. Sah, J. Y.-C. Sun, and J. J. Tzou, “Deactivation of the boron acceptor in silicon by hydrogen,” Appl. Phys. Lett. vol. 43, pp. 204—206, 1983.
17. C. pp. T. Sah, C. S. Pan, and C. C. Hsu, “Hydrogenation and annealing kinetics of group III acceptors in oxidized silicon,” J. Appl. Phys., vol. 57, 5148–5161, 1985.
18. J. Pankove, “Neutralization of shallow acceptors in silicon,” in Hydrogen in Semi Conductors. New York: Academic, 1991, pp. 91–110.
19. N. M. Johnson, “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon,” Phys. Rev. B, vol. 31, pp. 5525–5528,1985.
20. N. M. Johnson, C. Doland, F. Ponce, J. Walker, and G. Anderson, “Hydrogen in crystalline semiconductors,” Physica B, vol. 170, pp. 3–20, 1991.
21. S. J. Pearton, J. W. Corbett, and J. T. Borenstein, “Hydrogen diffusion in crystalline semiconductors,” Physica B, vol. 170, pp. 85–97, 1991.
22. D. Mathiot, “Modeling of hydrogen diffusion in n-and p-type silicon,” Phys. Rev. B, vol. 40, pp. 5867–5870, 1989.
23. C. Herrero, M. Stutzmann, A. Breitschwerdt, and P. Santos, “Trap-limited hydrogen diffusion in doped silicon,” Phys. Rev. B, vol. 41, pp. 1054–1058, 1990.
24. R. Rizk, P. de Mierry, D. Ballutaud, M. Aucouturier, and D. Mathiot, “On the modeling of hydrogen diffusion processes and complex formation in p-type crystalline silicon,” Physica B, vol. 170, pp. 129–134, 1991.
25. T. Zundel, A. Mesli, J. C. Muller, and P. Siffert, “Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation,” Appl. Phys. A, vol. 48, pp. 31–40, 1989.
26. C. Herrero, M. Stutzmann, and A. Breitschwerdt, “Boron-hydrogen complexes in crystalline silicon,” Phys. Rev. B, vol. 43, pp. 1555–1575, 1991.
27. T. Zundel. E. Courcelle, A. Mesli, J. Muller, and P. Siffert, “Field- enhanced neutralization of electrically active boron in hydrogen im- Schottky diodes,” Appl. Phys. A, vol. 40, pp. 67–69, 1986.
28. M. Stutzmann, W. Beyer, L. Tapfer, and C. Herrero, “States of hydrogen in crystalline silicon,” Physica B, vol. 170, pp. 240–244, 1991.
29. L. J. Giacoletto, “Measurement of emitter and collector series resistance,” IEEE Trans. Electron Devices, pp. 692–693, 1972.
30. T. H. Ning and D. D. Tang, “Method for determining the emitter and base series resistances of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 409–412, 1984.
31. N. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
32. G. Massabrio and P. Antognetti, Semiconductor Device Modeling with Spice, 2nd ed. New York: McGraw-Hill, 1993.