A 3.5 V, 1.3 W GaAs Power Multi-Chip IC for Cellular Phones

IEEE Journal of Solid-State Circuits

Volumn 29, Issue 10, 1994, Pages 1250-1256

  Maeda, Masahiro ^a   Nishijima, Masaaki ^a   Takehara, Hiroyasu ^a   Adachi, Chinatsu ^a   Fujimoto, Hiromasa ^a   Ishikawa, Osamu ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; ELECTRIC CONDUCTORS; ELECTRIC IMPEDANCE; ELECTRONICS PACKAGING; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MICROPROCESSOR CHIPS; PASSIVE NETWORKS; POWER AMPLIFIERS; PRINTED CIRCUIT BOARDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

INTERSTAGE MATCHING CIRCUITS; MICROSTRIP LINES; MULTI CHIP INTEGRATED CIRCUIT; PASSIVE MATCHING CHIPS;

INTEGRATED CIRCUITS;

EID: 0028516921     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.315211     Document Type: Article

References (8)

1. D. Ngo et al., “Low voltage GaAs power amplifiers for personal communication at 1.9 GHz,” MTT-S Int. Microwave Symp. Dig., pp. 1461–1464, 1993.
2. O. Ishikawa et al., “Advanced technologies of LowPower GaAs ICs and power modules for cellular telephones,” GaAs IC Symp. Dig., pp. 131–134, 1992.
3. Yutaka Hirano and Jun Fukaya, “Microwave high power GaAs FET,” 1991 Microwave Workshop and Exhibition Dig., Japan, pp. 319–324, Sept. 1991.
4. Yorito Ota et al., “High efficient very compact GaAs power modules for cellular telephones,” MTT-S Int. Microwave Symp. Dig., pp. 1517–1520, 1992.
5. O. Ishikawa et al., “Cellular telecommunication GaAs power modules,” Appl. Microwave Mag., vol. 4, no. 3, pp. 83–88, Fall 1992.
6. T. Takagi et al., “A UHF band 1.3 W monolithic amplifier with efficiency of 63%,” in Proc. Microwave and Millimeter-Wave Monolithic Circuit Symp., 1992, pp. 35–38.
7. J. J. Komiak, “Design and performance of an octave band 11 Watt power amplifier MMIC,” IEEE Trans. Microwave Theory Technol., vol. 38, no. 12. Dec. 1990, pp. 2001–2006.
8. M. Gat et al., “A3 Watt high efficiency C-band power MMIC,” GaAs IC Symp. Dig., pp. 331–334, 1991.