Subpicosecond gain and index nonlinearities in InGaAsP diode lasers

Optics Communications

Volumn 111, Issue 5-6, 1994, Pages 589-612

  Hall, K L ^a   Lenz, G ^a   Darwish, A M ^a   Ippen, E P ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC DISPERSION; ELECTROOPTICAL EFFECTS; LASER THEORY; NONLINEAR OPTICS; OPTICAL VARIABLES MEASUREMENT; OPTICAL WAVEGUIDES; PERTURBATION TECHNIQUES; REFLECTOMETERS; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS; SWITCHING; TIME DOMAIN ANALYSIS;

ACTIVE WAVEGUIDES; GAIN NONLINEARITIES; INDEX NONLINEARITIES; OPTICAL KERR EFFECT; OPTICAL SWITCHING; TIME DOMAIN REFLECTOMETRY;

SEMICONDUCTOR LASERS;

EID: 0028516649     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/0030-4018(94)90538-X     Document Type: Article

References (67)

1. High-frequency characteristics of directly modulated InGaAsP ridge waveguide and buried heterostructure lasers
2. Frequency response of 1.3µm InGaAsP high speed semiconductor lasers
3. Time- and spectral-domain evolution of subpicosecond pulses in semiconductor optical amplifiers
4. Ultrafast gain dynamics in 1.5 μm multiple quantum well optical amplifiers
5. Heterodyne pump - probe technique for time-domain studies of optical nonlinearities in waveguides
6. Techniques for Measurement
7. Femtosecond pulse generation in a laser with a nonlinear external resonator
8. Electron thermalization in gold
9. The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasers
10. Frequency-domain interferometer for femtosecond time-resolved phase spectroscopy