The X-ray energy response of silicon Part A. Theory

Nuclear Inst. and Methods in Physics Research, A

Volumn 350, Issue 1-2, 1994, Pages 368-378

  Fraser, G W ^a   Abbey, A F ^a   Holland, A ^a   McCarthy, K ^a   Owens, A ^a   Wells, A ^a  

^a UNIVERSITY OF LEICESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; CHARGE COUPLED DEVICES; ELECTROMAGNETIC WAVE ABSORPTION; ELECTRON EMISSION; ENERGY DISSIPATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PARTICLE DETECTORS; RADIATION EFFECTS; THERMAL EFFECTS; X RAYS;

ELECTRON HOLE PAIR; FANO FACTOR; K SHELL EXTENDED X RAY ABSORPTION FINE STRUCTURE (EXAFS); X RAY ENERGY LOSS;

SILICON SENSORS;

EID: 0028516426     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(94)91185-1     Document Type: Article

References (54)

1. Quantum efficiency of a semiconductor photodiode in the VUV determined by comparison with a proportional counter in monochromatized synchrotron radiation
2. Multi-Spectral Solar Telescope Array II: soft x-ray EUV reflectivity of the multilayer mirrors
3. Linearity and Resolution of Semiconductor Radiation Detectors
4. Multiple-scattering effects in the K-edge x-ray-absorption near-edge structure of crystalline and amorphous silicon
5. Variation of energy linearity and w value in gaseous xenon radiation detectors for X-rays in the 0.1 to 25 KeV energy range: a Monter Carlo simulation study
6. Detection of Low Energy X Rays with Si(Li) Detectors
7. Fano-Noise-Limited CCDs
8. Atomic Radiation Transition Probabilities to the 1s State and Theoretical K-Shell Fluorescence Yields
9. Hot Carriers in Si and Ge Radiation Detectors
10. Imaging Microchannel Plate Detectors For XUV Sky Survey Experiments
11. IEEE Trans. Nucl. Sci. NS-20
12. Measurements of the Average Energy Per Electron-Hole Pair Generation in Silicon between 5-320degrees K
13. Multiple-scattering effects in the K-edge x-ray-absorption near-edge structure of crystalline and amorphous silicon
14. Photoabsorption near the L_{II,III} Edge of Silicon and Aluminum