A CAD model for microstrips on r‐cut sapphire substrates

International Journal of Microwave and Millimeter‐Wave Computer‐Aided Engineering

Volumn 4, Issue 4, 1994, Pages 374-383

  Vendik, Irina B ^a   Vendik, Orest G ^a   Gevorgian, Spartak S ^a   Sitnikova, Margarita F ^b   Olsson, Eva ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Dept Dielectrics Semiconductors S   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; CRYSTALS; DIELECTRIC PROPERTIES; EPITAXIAL GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MICROWAVE DEVICES; SAPPHIRE; SUBSTRATES; SUPERCONDUCTING FILMS; YTTRIUM COMPOUNDS;

CRYSTALLOGRAPHIC AXES; DIELECTRIC CONSTANT; MICROSTRIPS; MICROWAVE INTEGRATED CIRCUITS; R CUT SAPPHIRE;

STRIP TELECOMMUNICATION LINES;

EID: 0028516028     PISSN: 10501827     EISSN: 15226301     Source Type: Journal    
DOI: 10.1002/mmce.4570040407     Document Type: Article

References (16)

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12. 2‐18‐GHz Dispersion Measurements on 10‐100‐Ω Microstrip Lines on Sapphire