Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

Applied Physics Letters

Volumn 65, Issue 11, 1994, Pages 1388-1390

  Fafard, S ^a   Leonard, D ^a   Merz, J L ^a   Petroff, P M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

DENSITY OF STATES; EXCITATION ENERGY; INDIUM GALLIUM ARSENIDE; LATERAL CONFINEMENT INDUCED INTERLEVEL SPACING; QUANTUM DOTS; SELECTIVE PHOTOLUMINESCENCE EXCITATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028515009     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.112060     Document Type: Article

References (0)