-
1
-
-
0012796376
-
Evidence for impact-ionized electron injection in substrate of n-channel MOS structures
-
J. Matsunaga and S. Kohyama, “Evidence for impact-ionized electron injection in substrate of n-channel MOS structures,” Appl. Phys. Lett., vol. 33, pp. 335–337, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.33
, pp. 335-337
-
-
Matsunaga, J.1
Kohyama, S.2
-
2
-
-
0019247399
-
Characterization of two step impact ionization and its influence in NMOS and PMOS VLSI’s
-
J. Matsunaga, H. Momose, H. Iizuka, and S. Kohyama, “Characterization of two step impact ionization and its influence in NMOS and PMOS VLSI’s,” in IEDM Tech. Dig., 1980, pp. 736–739.
-
(1980)
IEDM Tech. Dig.
, pp. 736-739
-
-
Matsunaga, J.1
Momose, H.2
Iizuka, H.3
Kohyama, S.4
-
3
-
-
0019702792
-
Holding time degradation in dynamic MOS RAM by injection-induced electron currents
-
B. Eitan, D. Frohman-Bentchowsky, and J. Shappir, “Holding time degradation in dynamic MOS RAM by injection-induced electron currents,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1515–1519, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 1515-1519
-
-
Eitan, B.1
Frohman-Bentchowsky, D.2
Shappir, J.3
-
4
-
-
0019559276
-
Alternative mechanism for substrate minority carrier injection in MOS devices operation in low level avalanche
-
P. A. Childs, E. Eccleston, and R. A. Stuart, “Alternative mechanism for substrate minority carrier injection in MOS devices operation in low level avalanche,” Electron. Lett., vol. 17, pp. 281–282, 1981.
-
(1981)
Electron. Lett.
, vol.17
, pp. 281-282
-
-
Childs, P.A.1
Eccleston, E.2
Stuart, R.A.3
-
5
-
-
0020781254
-
Evidence of optical generation of minority carriers from saturated MOS transistors
-
P. A. Childs, R. A. Stuart, and W. Ecceleston, “Evidence of optical generation of minority carriers from saturated MOS transistors,” Solid-State Electron., vol. 26, pp. 685–688, 1983.
-
(1983)
Solid-State Electron.
, vol.26
, pp. 685-688
-
-
Childs, P.A.1
Stuart, R.A.2
Ecceleston, W.3
-
6
-
-
0020252646
-
Hot-electron-induced excess carriers in MOSFET’s
-
S. Tam, F. C. Hsu, P. K. Ko, C. Hu, and R. S. Muller, “Hot-electron-induced excess carriers in MOSFET’s" IEEE Electron Device Lett., vol. EDL-3, pp. 376–378, 1982.
-
(1982)
IEEE Electron Device Lett.
, vol.EDL-3
, pp. 376-378
-
-
Tam, S.1
Hsu, F.C.2
Ko, P.K.3
Hu, C.4
Muller, R.S.5
-
7
-
-
0021482804
-
Hot-electron-induced photon and photocarrier generation in silicon MOSFET’s
-
S. Tam and C. Hu, “Hot-electron-induced photon and photocarrier generation in silicon MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1264–1273, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1264-1273
-
-
Tam, S.1
Hu, C.2
-
8
-
-
84945713471
-
Hot-electron-induced MOSFET degradation-Model, monitor, and improvement
-
C. Hu, S.C. Tam, F.C. Hsu, P.K. Ko, T. Y. Chan, and K.W. Terrill, “Hot-electron-induced MOSFET degradation-Model, monitor, and improvement,”IEEE Trans. Electron Devices, vol. ED-32, pp. 375–385, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 375-385
-
-
Hu, C.1
Tam, S.C.2
Hsu, F.C.3
Ko, P.K.4
Chan, T.Y.5
Terrill, K.W.6
-
9
-
-
0008452633
-
Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET’s
-
T. Tsuchiya and S. Nakajima, “Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-32, pp. 405–412, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 405-412
-
-
Tsuchiya, T.1
Nakajima, S.2
-
10
-
-
0022313935
-
Experimental determination of hot-carrier energy distribution and minority carrier generation mechanism due to hot-carrier effects
-
A. Toriumi, M. Yoshimi, M. Iwase, and K. Taniguchi, “Experimental determination of hot-carrier energy distribution and minority carrier generation mechanism due to hot-carrier effects,” in IEDM Tech. Dig., 1985, pp. 56–59.
-
(1985)
IEDM Tech. Dig.
, pp. 56-59
-
-
Toriumi, A.1
Yoshimi, M.2
Iwase, M.3
Taniguchi, K.4
-
11
-
-
0023382681
-
A study of photon emission from n-channel MOSFET’s
-
A. Toriumi, M. Yoshimi, M. Iwase, Y. Akiyama, and K. Taniguchi, “A study of photon emission from n-channel MOSFET’s" IEEE Trans. Electron Devices, vol. ED-34, pp. 1501–1508, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 1501-1508
-
-
Toriumi, A.1
Yoshimi, M.2
Iwase, M.3
Akiyama, Y.4
Taniguchi, K.5
-
12
-
-
85067400776
-
Photo Emission from 70 nm Gate length MOSFET
-
H. Kurino, H. Hashimoto, Y. Hiruma, T. Fujiwara, and M. Koyanagi, “Photo Emission from 70 nm Gate length MOSFET,” in IEDM Tech. Dig., 1992, pp. 1015–1018.
-
(1992)
IEDM Tech. Dig.
, pp. 1015-1018
-
-
Kurino, H.1
Hashimoto, H.2
Hiruma, Y.3
Fujiwara, T.4
Koyanagi, M.5
-
13
-
-
4243740767
-
A two-dimensional analysis of hot-carrier photoemission from LOCOS- and Trench-isolated MOSFETs
-
T. Ohzone, H. Iwata, Y. Uraoka, and S. Odanaka, “A two-dimensional analysis of hot-carrier photoemission from LOCOS- and Trench-isolated MOSFETs,” in IEDM Tech. Dig., 1992, pp. 527–530.
-
(1992)
IEDM Tech. Dig.
, pp. 527-530
-
-
Ohzone, T.1
Iwata, H.2
Uraoka, Y.3
Odanaka, S.4
-
14
-
-
0345369830
-
The Stanford BiCMOS Project Annu. Rep
-
Stanford Univ.
-
The Stanford BiCMOS Project Annu. Rep., Center for Integrated Systems, Stanford Univ., pp. 7–24, 1990.
-
(1990)
Center for Integrated Systems
, pp. 7-24
-
-
-
15
-
-
0024172243
-
A new static memory cell based on reverse base current (RBC) effect of bipolar transistor
-
K. Sakui, T. Hasegawa, T. Fuse, S. Watanabe, K. Ohuchi, and F. Masuoka, “A new static memory cell based on reverse base current (RBC) effect of bipolar transistor,” in IEDM Tech. Dig., 1988, pp. 44–47.
-
(1988)
IEDM Tech. Dig.
, pp. 44-47
-
-
Sakui, K.1
Hasegawa, T.2
Fuse, T.3
Watanabe, S.4
Ohuchi, K.5
Masuoka, F.6
-
16
-
-
0024684383
-
A new static memory cell based on the reverse base current effect of bipolar transistor
-
K. Sakui, T. Hasegawa, T. Fuse, S. Watanabe, K. Ohuchi, and F. Masuoka, “A new static memory cell based on the reverse base current effect of bipolar transistor,” IEEE Trans. Electron Devices, vol. 36, pp. 1215–1217, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 1215-1217
-
-
Sakui, K.1
Hasegawa, T.2
Fuse, T.3
Watanabe, S.4
Ohuchi, K.5
Masuoka, F.6
-
17
-
-
84946245227
-
A new reverse base current (RBC) of the
-
K. Sakui, T. Hasegawa, T. Fuse, T. Seshita, S. Aritome, S. Watanabe, K. Ohuchi, and F. Masuoka, “A new reverse base current (RBC) of the
-
-
-
Sakui, K.1
Hasegawa, T.2
Fuse, T.3
Seshita, T.4
Aritome, S.5
Watanabe, S.6
Ohuchi, K.7
Masuoka, F.8
-
18
-
-
84918128860
-
bipolar transistor induced by impact ionization
-
bipolar transistor induced by impact ionization,” Japan J. Appl. Phys., vol. 28, no. 12, pp. L2150–2152, 1989.
-
(1989)
Japan J. Appl. Phys.
, vol.28
, Issue.12
-
-
-
19
-
-
0024683097
-
Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistor
-
P. F. Lu and T. C. Chen, “Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistor,” IEEE Trans. Electron Devices, vol. 36, pp. 1182–1188, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 1182-1188
-
-
Lu, P.F.1
Chen, T.C.2
-
20
-
-
0024870219
-
Hot-electron-induced minority carrier generation in bipolar junction transistor
-
H. Ishiuchi, N. Tamba, J. D. Shott, C. J. Knorr. and S. S. Wong, “Hot-electron-induced minority carrier generation in bipolar junction transistor,” in IEDM Tech. Dig., 1989, pp. 803–806.
-
(1989)
IEDM Tech. Dig.
, pp. 803-806
-
-
Ishiuchi, H.1
Tamba, N.2
Shott, J.D.3
Knorr, C.J.4
Wong, S.S.5
-
21
-
-
0025519524
-
Hot-electron-induced minority-carrier generation in bipolar junction transistors
-
H. Ishiuchi, N. Tamba, J. D. Shott, C. J. Knorr, and S. S. Wong, “Hot-electron-induced minority-carrier generation in bipolar junction transistors,” IEEE Electron Device Lett., vol. 11, pp. 490–492, 1990.
-
(1990)
IEEE Electron Device Lett.
, vol.11
, pp. 490-492
-
-
Ishiuchi, H.1
Tamba, N.2
Shott, J.D.3
Knorr, C.J.4
Wong, S.S.5
-
22
-
-
0016049539
-
Subthreshold Design Considerations for Insulated Gate Field-Effect Transistors
-
R. Troutman, “Subthreshold Design Considerations for Insulated Gate Field-Effect Transistors,” IEEE J. Solid State Circuits, vol. 9, pp. 55–60, 1974.
-
(1974)
IEEE J. Solid State Circuits
, vol.9
, pp. 55-60
-
-
Troutman, R.1
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