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Volumn 76, Issue 6, 1994, Pages 3797-3817

Optical and electrical properties of radio frequency sputtered tin oxide films doped with oxygen vacancies, F, Sb, or Mo

(3) Stjerna, B a Olsson, E a Granqvist, C G b

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

b UPPSALA UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; FLUORINE; MAGNETRON SPUTTERING; MOLYBDENUM; OPTICAL PROPERTIES; OXYGEN; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROPHOTOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAP BROADENING; HALL EFFECT MEASUREMENT; IONIZED IMPURITY SCATTERING; OXYGEN VACANCY; TIN OXIDE FILMS; X RAY DIFFRACTOMETRY;

SEMICONDUCTING FILMS;

EID: 0028514266 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.357383 Document Type: Article

Times cited : (276)

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