Vertical Cavity Surface Emitting Lasers With 21% Efficiency by Metalorganic Vapor Phase Epitaxy

IEEE Photonics Technology Letters

Volumn 6, Issue 9, 1994, Pages 1053-1055

  Lear, K L ^a   Schneider, R P ^a   Choquette, K D ^a   Kilcoyne, S P ^a   Figiel, J J ^a   Zolper, J C ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; LASER MODES; MIRRORS; PROTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

METALORGANIC VAPOR PHASE EPITAXY; MIRROR GRADING DESIGNS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0028498375     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.324666     Document Type: Article

References (15)

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