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Volumn 6, Issue 9, 1994, Pages 1119-1121

Silicon Modulator Based on Mechanically-Active Anti-Reflection Layer with 1 Mbit/sec Capability for Fiber-in-the-Loop Applications

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; DAMPING; DIGITAL DEVICES; FIBER OPTIC NETWORKS; LIGHT INTERFERENCE; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; OSCILLATORS (ELECTRONIC);

EID: 0028497583     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.324686     Document Type: Article
Times cited : (71)

References (6)
  • 1
    • 0023044733 scopus 로고
    • T. Wood, et al., Elec. Lett. vol. 22, p. 528, 1986.
    • (1986) Elec. Lett , vol.22 , pp. 528
    • Wood, T.1
  • 2
    • 84941493493 scopus 로고
    • RITE—NET: A passive optical network architecture based on the remote interrogation of terminal equipment
    • postdeadline session Optical Society of America, Wash., DC
    • N. J. Frigo, et al., “RITE—NET: A passive optical network architecture based on the remote interrogation of terminal equipment,” in Conf. on Opt. Fiber Commun., 1994 Technical Digest Series, postdeadline session, p. 43, vol. 4 (Optical Society of America, Wash., DC, 1994).
    • (1994) Conf. on Opt. Fiber Commun. 1994 Technical Digest Series , vol.43 , Issue.4
    • Frigo, N.J.1
  • 6
    • 84941514691 scopus 로고
    • Gas composition dependence of silicon nitride used as gallium diffusion barrier during GaAs MBE growth on Si CMOS
    • to appear in, Aug.
    • J. A. Walker, K. W. Goossen, J. E. Cunningham, W. Y. Jan, and D. A. B. Miller, “Gas composition dependence of silicon nitride used as gallium diffusion barrier during GaAs MBE growth on Si CMOS,” to appear in J. Elec. Materials, Aug. 1994.
    • (1994) J. Elec. Materials
    • Walker, J.A.1    Goossen, K.W.2    Cunningham, J.E.3    Jan, W.Y.4    Miller, D.A.B.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.