Modelling oxygen defects in silicon crystals using an empirical interatomic potential

Chemical Engineering Science

Volumn 49, Issue 17, 1994, Pages 2991-3000

  Jiang, Z ^a   Brown, R A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ATOMS; CRYSTAL STRUCTURE; CRYSTALS; OXYGEN; SILICA; SILICON; SOLUBILITY; THERMODYNAMICS;

ELECTRONIC CHARGE; ENTHALPY; INFRARED ABSORPTION; INTERATOMIC POTENTIAL; MICRODEFECTS; OXYGEN DEFECTS; SILICON CRYSTALS; STILLINGER WEBER POTENTIAL;

CRYSTAL DEFECTS;

EID: 0028497126     PISSN: 00092509     EISSN: None     Source Type: Journal    
DOI: 10.1016/0009-2509(94)E0116-8     Document Type: Article

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