Microwave Mixers Employing Multiple-Barrier Semiconductor Heterostructure Devices

IEEE Transactions on Microwave Theory and Techniques

Volumn 42, Issue 9, 1994, Pages 1596-1601

  Tait, Gregory B ^a  

^a UNITED STATES MILITARY ACADEMY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DIODES; SIGNAL TO NOISE RATIO;

MICROWAVE MIXERS; MULTIPLE BARRIER SEMICONDUCTOR HETEROSTRUCTURE DEVICES;

MIXER CIRCUITS;

EID: 0028496244     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.310551     Document Type: Article

References (10)

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