High-Tc edge-geometry SNS weak links on silicon-on-sapphire substrates

Physica C: Superconductivity and its applications

Volumn 230, Issue 1-2, 1994, Pages 141-152

  Hunt, B D ^a   Foote, M C ^a   Pike, W T ^a   Barner, J B ^a   Vasquez, R P ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER OXIDES; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GRAIN BOUNDARIES; HIGH TEMPERATURE SUPERCONDUCTORS; PRASEODYMIUM COMPOUNDS; SILICON ON SAPPHIRE TECHNOLOGY; SUBSTRATES; THIN FILMS; YTTRIUM COMPOUNDS;

COBALT DOPED YTTRIUM BARIUM COPPER OXIDES; CURRENT VOLTAGE CHARACTERISTICS; PRASEODYMIUM BARIUM COPPER OXIDES; RESISTIVELY SHUNTED JUNCTION MODEL; STRONTIUM TITANATE/SEED LAYER/CUBIC ZIRCONIA BUFFER SYSTEM; SUPERCONDUCTOR/NORMAL METAL/SUPERCONDUCTOR EDGE GEOMETRY WEAK LINKS;

JOSEPHSON JUNCTION DEVICES;

EID: 0028495844     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4534(94)90456-1     Document Type: Article

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