Low-Bias-Current Direct Modulation up to 33 GHz in InGaAs/GaAs/AlGaAs Pseudomorphic MQWRidge-Waveguide Lasers

IEEE Photonics Technology Letters

Volumn 6, Issue 9, 1994, Pages 1076-1079

  Ralston, J D ^a   Weisser, S ^a   Eisele, K ^a   Sah, R E ^a   Larkins, E C ^a   Rosenzweig, J ^a   Fleissner, J ^a   Bender, K ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; ETCHING; MODULATION; OPTICAL LINKS; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

CHEMICAL ASSISTED ION BEAM ETCHING; DRY ETCHED FACETS; LOW BIAS CURRENT DIRECT MODULATION; RIDGE WAVEGUIDE LASERS;

SEMICONDUCTOR LASERS;

EID: 0028495686     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.324673     Document Type: Article

References (18)

1. J. D. Ralston, et al., “Control of differential gain, nonlinear gain, and damping factor for high-speed applications of GaAs-based MQW lasers,” IEEE J. Quantum Electron., vol. 29, 1648–1659, 1993.
2. A. Schönfelder, S. Weisser, J. D. Ralston, and J. Rosenzweig, “α-factor improvements in high-speed p-doped In 0.35 Ga 0.65 As/GaAs MQW lasers,” Electron. Lett., vol. 29, pp. 1685–1686, 1994.
3. J. D. Ralston, et al., “Vertically compact 15 GHz GaAs/AIGaAs multiple quantum well laser grown by molecular beam epitaxy,” Electron Lett., vol. 27, pp. 1720–1722, 1991.
4. J.Hornung, et al., “7.4 Gbit/s monolithically integrated GaAs/AIGaAs laser diode/laser driver structure,” Electron. Lett., vol. 29, pp. 1694–1696, 1993.
5. J. D. Ralston, et al., “Device and process technologies for monolithic high-speed, low-chirp semiconductor laser transmitters.” CLEO Tech. Dig., vol. 8, 275–276, 1994.
6. L. F. Lester, W. J. Schaff, X. Song, and L. F. Eastman, “Optical and RF characteristics of short-cavity-length multiquantum-well strained-layer lasers,” IEEE Photon. Technol. Lett., vol. 3, 1049–1051, 1991.
7. E. C. Larkins, etal., “MBE growth of In 0.35 Ga 0.65 As/GaAs MQW's for high-speed lasers: Relaxation limits and factors influencing dislocation glide,” Inst. Phys. Conf. Ser., vol. 136, pp. 523–528, 1994.
8. G. Flemig, et al. “Ion-channeling studies of In y Ga 1-y As/GaAs strained-layer single and multiple quantum-well structures,” J. Cryst. Growth, to be published, 1994.
9. J. Wagner, E. C. Larkins, N. Herres, J. D. Ralston, and P. Koidl, “Defect and strain redistribution in In y Ga 1-y As/GaAs multiple quantum wells studied by resonant Raman scattering,” Appl. Phys. Lett., vol. 63, pp. 1842–1844, 1993.
10. J. D. Ralston, et al., “Enhancements in MBE-grown high-speed GaAs and In 0.35 Ga 0.65 MQW laser structures using binary short-period superlattices,” J. Cryst. Growth J. vol. 127, 19–24, 1993.
11. C. T. Foxon, et al., “Substrate temperature dependence of SQW alloy and superlattice lasers grown by MBE using AS 2,” J. Cryst. Growth, vol.111, pp. 1047–1051, 1991.
12. J. D. Ralston, et al., “p-Dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers,” Mater. Sci. Eng., vol. B21 pp. 232–236, 1993.
13. K. Eisele, “A second look at reactive ion-beam etching and chemically-assisted ion-beam etching,” Braz. J. Vacuum Applications., vol. 11, pp. 3–10, 1992.
14. S. Weisser, et al., “Efficient high-speed direct modulation in p-doped In 0.35 Ga 0.65 As/GaAs multiquantum well lasers,” Electron. Lett., vol. 28, pp. 2141–2143, 1992.
15. P. A. Morton, et al., “25 GHz bandwidth 1.55 pm GaInAsP p- doped strained multiquantum-well lasers,” Electron. Lett., vol. 28, pp. 2156–2157, 1992.
16. S. Weisser, I. Esquivias, P. J. Tasker, J. D. Ralston, and J. Rosenzweig, “Impedance, modulation response, and equivalent circuit of ultra-high-speed In 0.35 Ga 0.65 As/GaAs MQW lasers with p-doping,” IEEE Photon. Technol. Lett., vol. 6, no. 7, pp. 782–785, July 1994.
17. Z.-G. Wang, et al., “Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3 pm gate length quantum-well HEMT's,” IEEE J. Solid-State vol. 28, 1993.
18. T. R. Chen, et al., “Very high modulation efficiency of ultralow threshold current single quantum well InGaAs lasers,” Electron. Lett. vol. 29, pp. 1525–1527, 1993.