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Physical Review Letters

Volumn 73, Issue 5, 1994, Pages 716-719

Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs

(5) Marzin, J Y a Gerard J M a Izrael A a Barrier, D a Bastard, G b

a ORANGE LABS (France)

b ECOLE NORMALE SUPÉRIEURE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURVE FITTING; ELECTRON ENERGY LEVELS; ENERGY GAP; LOW TEMPERATURE EFFECTS; LOW TEMPERATURE PHENOMENA; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STATISTICAL METHODS;

EMISSION ENERGY; INDIUM ARSENIDE; QUANTUM DOTS; RELAXATION TIME;

PHOTOLUMINESCENCE;

EID: 0028494161 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.73.716 Document Type: Article

Times cited : (1057)

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