Theoretical performance of InAs/ InxGa1-xSb superlattice-based midwave infrared lasers

Journal of Applied Physics

Volumn 76, Issue 3, 1994, Pages 1940-1942

  Grein, C H ^a   Young, P M ^b   Ehrenreich, H ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRON SCATTERING; ENERGY CONSERVATION; ENERGY GAP; PERTURBATION TECHNIQUES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

AUGER RECOMBINATION; CARRIER DENSITY; CARRIER LIFETIME; MIDWAVE INFRARED LASERS; OPTICAL GAIN; RADIATIVE RECOMBINATION;

SEMICONDUCTOR LASERS;

EID: 0028492345     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.357682     Document Type: Article

References (11)