Excite-probe determination of the intersubband lifetime in wide GaAs/AlGaAs quantum wells using a far-infrared free-electron laser

Semiconductor Science and Technology

Volumn 9, Issue 8, 1994, Pages 1554-1557

  Murdin, B N ^a   Knippels, G M H ^a   Van Der Meer, A F G ^a   Pidgeon, C R ^b   Langerak, C J G M ^b   Helm, M ^b   Heiss, W ^b   Unterrainer, K ^b   Gornik, E ^b   Geerinck, K K ^b   Hovenier, N J ^b   Wenckebach, W Th ^b  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

INTERSUBBAND LIFETIME; OPTICAL PHONON ENERGY; PICOSECOND; SUBPICOSECOND;

ENERGY ABSORPTION; ENERGY GAP; FREE ELECTRON LASERS; INFRARED SPECTROSCOPY; OPTICAL PROPERTIES; PHONONS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TIME DOMAIN ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028486156     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/9/8/019     Document Type: Article

References (23)

1. Transient reshaping of intersubband absorption spectra due to hot electrons in a modulation-doped multiple-quantum-well structure