A New Hydrogen Sensor Using a Polycrystalline Diamond-Based Schottky Diode

Journal of the Electrochemical Society

Volumn 141, Issue 8, 1994, Pages 2231-2234

  Kang, W P ^a   Gurbuz, Y ^a   Davidson, J L ^a   Kerns, D V ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; HYDROGEN; PALLADIUM; PRESSURE EFFECTS; REACTION KINETICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS;

ACTIVATION ENERGY; BARRIER HEIGHT; HYDROGEN PARTIAL PRESSURE; HYDROGEN SENSOR; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE DIAMOND BASED SCHOTTKY DIODE;

GAS SENSING ELECTRODES;

EID: 0028482907     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2055094     Document Type: Article

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