Disk-shaped stacked capacitor cell for 256 Mb dynamic random-access memory

Japanese Journal of Applied Physics

Volumn 33, Issue 8 R, 1994, Pages 4570-4575

  Morihara, Toshinori ^a   Ohno, Yoshikazu ^a   Eimori, Takahisa ^a   Katayama, Toshiharu ^a   Satoh, Shinichi ^a   Nishimura, Tadashi ^a   Miyoshi, Hirokazu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

DRAM; Memory cell; Silicon; Stacked capacitor

Indexed keywords

CELLULAR ARRAYS; DIELECTRIC FILMS; ELECTRIC PROPERTIES; LITHOGRAPHY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR STORAGE; SILICON;

DISK SHAPED STACKED CAPACITOR CELL; DYNAMIC RANDOM ACCESS MEMORY;

RANDOM ACCESS STORAGE;

EID: 0028482699     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.4570     Document Type: Article

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