Data retention characteristics of flash memory cells after write and erase cycling

IEICE Transactions on Electronics

Volumn E77-C, Issue 8, 1994, Pages 1287-1294

  Aritome, Seiichi ^a   Shirota, Riichiro ^a   Sakui, Koji ^a   Masuoka, Fujio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA PROCESSING; ELECTRON TUNNELING; ELECTRONS; GATES (TRANSISTOR); PROM; RELIABILITY; SEMICONDUCTING SILICON;

CHARGE TRAPPING PROCESS; DATA RETENTION; ELECTRON TRAP; ENDURANCE; FLASH MEMORY CELLS; FOWLER NORDHEIM TUNNELING; GATE OXIDE; THRESHOLD VOLTAGE WINDOW; TUNNEL OXIDE;

SEMICONDUCTOR STORAGE;

EID: 0028482182     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (22)