Two-dimensional growth and decomposition of initial thermal Si O 2 layer on Si(100)

Japanese Journal of Applied Physics

Volumn 33, Issue 8 R, 1994, Pages 4684-4690

  Horie, Tetsuhiro ^a,b   Takakuwa, Yuji ^a   Miyamoto, Nobuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

Decomposition; Migration of oxygen; SiO2 islands; Surface morphology; Thermal oxidation; Two dimensional growth; UPS; Voids

Indexed keywords

DECOMPOSITION; DESORPTION; FILM GROWTH; GAS ADSORPTION; MORPHOLOGY; OXYGEN; REACTION KINETICS; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE PROPERTIES; THERMOOXIDATION; THIN FILMS;

OXYGEN MIGRATION; SILICA ISLANDS; TWO DIMENSIONAL GROWTH; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; VOIDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICA;

EID: 0028480511     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.4684     Document Type: Article

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