Relating Statistical MOSFET Model Parameter Variabilities to IC Manufacturing Process Fluctuations Enabling Realistic Worst Case Design

IEEE Transactions on Semiconductor Manufacturing

Volumn 7, Issue 3, 1994, Pages 306-318

  Power, James A ^a   Donnellan, Brian ^b   Mathewson, Alan ^c   Lane, William A ^c  

^a Silvaco Data Systems Inc   (United States)

^b ANALOG DEVICES   (Ireland)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; CORRELATION METHODS; ELECTRIC NETWORK PARAMETERS; INTEGRATED CIRCUIT MANUFACTURE; OPTIMIZATION; PARAMETER ESTIMATION; PRODUCT DESIGN; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

DESIGN FOR MANUFACTURABILITY; INTEGRATED CIRCUIT MANUFACTURING PROCESS FLUCTUATIONS; PARAMETER VARIABILITIES; REALISTIC WORST CASE DESIGN; STATISTICAL CIRCUIT DESIGN METHODOLOGY; STATISTICAL MOSFET MODEL PARAMETERS;

MOSFET DEVICES;

EID: 0028480268     PISSN: 08946507     EISSN: 15582345     Source Type: Journal    
DOI: 10.1109/66.311334     Document Type: Article

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