A simple analytical model for gate capacitance-voltage characteristics of HEMTs

Solid State Electronics

Volumn 37, Issue 7, 1994, Pages 1377-1381

  DasGupta, Amitava ^a   DasGupta, Nandita ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTATIONAL METHODS; CURVE FITTING; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRONS; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CLOSED-FORM EXPRESSION; DONOR NEUTRALIZATION; FREE CORNER GENERATION; GATE VOLTAGE DEPENDENCE; GATE-CAPACITANCE VOLTAGE CHARACTERISTICS; SHEET CARRIER CONCENTRATION; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028470803     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90195-3     Document Type: Article

References (10)

1. Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors
2. Gate capacitance—Voltage characteristic of MODFET's: Its effect on transconductance
3. A treatise on the capacitance—Voltage relation of high electron mobility transistors
4. A model for the capacitance—Voltage characteristics of MODFET's