High temperature scanning tunneling microscopy studies on the interaction of O2 with Si(111)-(7 × 7) surfaces

Surface Science

Volumn 314, Issue 1, 1994, Pages 34-56

  Feltz, A ^a   Memmert, U ^a   Behm, R J ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CRYSTAL GROWTH; CRYSTALLIZATION; DIFFUSION; ETCHING; HIGH TEMPERATURE OPERATIONS; MICROSCOPIC EXAMINATION; OXIDATION; OXIDES; OXYGEN; PRESSURE EFFECTS; SEMICONDUCTING SILICON;

ADATOMS; NUCLEATION; OXIDE CLUSTERS; SCANNING TUNNELING MICROSCOPY; STEP FLOW PROCESS; STEP PROPAGATION VELOCITY; VACANCY DIFFUSION MODEL;

SURFACE PHENOMENA;

EID: 0028466971     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(94)90211-9     Document Type: Article

References (32)

1. The Etching of Silicon by Oxygen Observed by in situ Tem
2. Gas phase etching of Si(111)-(7×7) surfaces by oxygen observed by scanning tunneling microscopy
3. Elevated temperature oxidation and etching of the Si(111) 7×7 surface observed with scanning tunneling microscopy
4. Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)-(7×7)
5. Modelling of pattern growth by vacancy diffusion and trapping on Si(111)7 × 7 surface