Scaling of MOS technology to submicrometer feature sizes

Analog Integrated Circuits and Signal Processing

Volumn 6, Issue 1, 1994, Pages 9-25

  Mead, Carver A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDUSTRIAL RESEARCH; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TECHNOLOGY;

FEATURE SIZE REDUCTION; MOS TECHNOLOGY; SCALING; SUBMICROMETER FEATURE SIZES;

MOS DEVICES;

EID: 0028466732     PISSN: 09251030     EISSN: 15731979     Source Type: Journal    
DOI: 10.1007/BF01250732     Document Type: Article

References (34)

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12. Quantum-mechanical modeling of accumulation layers in MOS structure
13. Internal field emission at narrow silicon and germanium p-n junctions
14. Effect of degenerate semiconductor band structure on current-voltage characteristics of silicon tunnel diodes
15. Theory of electron tunneling in semiconductors with degenerate band structure
16. Zener and avalanche breakdown in as-implanted low-voltage Si n-p junctions
17. Tunneling in base-emitter junctions
18. Inherent and stress-induced leakage in heavily doped silicon junctions
19. Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors
20. VLSI limitations from drain-induced barrier lowering
21. DIBL in short-channel NMOS devices at 77 K
22. Drain-induced barrier lowering in buried-channel MOSFETs
23. Simple analytical expressions for the fringing field and fringing-field-induced transfer time in charge-coupled devices
24. Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs
25. Unified model for drift velocities of electrons and holes in semiconductors as a function of temperature and electric field
26. Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage
27. Trading speed for low power by choice of supply and threshold voltages
28. Minimization of transistor delay at a given power density
29. Current-voltage characteristics of small size MOS transistors