Metal-insulator-semiconductor Schottky-type diodes of doped thiophene oligomers

Synthetic Metals

Volumn 65, Issue 1, 1994, Pages 45-53

  de Leeuw, D M ^a   Lous, E J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Doping; Metal insulator semiconductor; MIS diodes; Oligomers; Schottky diodes; Thiophene

Indexed keywords

CHARGE CARRIERS; CHEMICAL REACTIONS; CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; MIS DEVICES; OLIGOMERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SULFUR COMPOUNDS; THIN FILMS;

2,3-DICHLORO-5,6-DICYANO-1,4-BENZOQUINONE; CHARGE INJECTION; OLIGOTHIOPHENE; SPACE CHARGE LIMITED CURRENTS;

SEMICONDUCTING POLYMERS;

EID: 0028463899     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/0379-6779(94)90292-5     Document Type: Article

References (27)

1. Schottky junctions based on vacuum evaporated films of thiophene oligomers
2. Metal-polymer Schottky barriers on processible polymers
3. Novel Temperature-Dependent Junction Characteristics of Poly(3-alkylthiophene) Schottky Diodes
4. Charge transport in poly(3-methylthiophene) schottky barrier diodes
5. Polyacrylic acid-doped polyaniline as p-type semiconductor in Schottky barrier electronic device
6. Stable solutions of doped thiophene oligomers
7. Evidence for a linear low-voltage space-charge-limited current in organic thin films. Film thickness and temperature dependence in alpha-conjugated sexithienyl