Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

IEEE Transactions on Electron Devices

Volumn 41, Issue 7, 1994, Pages 1112-1119

  Salem, Ali F ^a   Smith, Arlynn W ^a   Brennan, Kevin F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; FREQUENCY RESPONSE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE DOUBLE HETEROSTRUCTURE; METAL SEMICONDUCTOR METAL PHOTODETECTOR; THERMIONIC FIELD EMISSION BOUNDARY CONDITION MODEL; TWO DIMENSIONAL DRIFT DIFFUSION NUMERICAL CALCULATIONS;

PHOTODETECTORS;

EID: 0028463723     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293337     Document Type: Article

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