On the nature and structures of different heat treatment centres in n- and p-type silicon

Semiconductor Science and Technology

Volumn 9, Issue 7, 1994, Pages 1346-1353

  Meilwes, N ^a   Spaeth, J M ^a   Emtsev, V V ^a   Oganesyan, G A ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI; ELECTRON NUCLEAR DOUBLE RESONANCE; NL10 DEFECT; OXYGEN RICH SILICON; SPIN LATTICE RELAXATION TIME; THERMAL DONORS;

ANNEALING; DEFECTS; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; HEAT TREATMENT; MAGNETIC VARIABLES MEASUREMENT; OPTICAL VARIABLES MEASUREMENT; OXYGEN; PARAMAGNETIC RESONANCE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

SEMICONDUCTING SILICON;

EID: 0028462236     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/9/7/008     Document Type: Article

References (25)

1. Novel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470° C
2. Aluminum Related Thermally Induced Defects in Silicon