Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-30 nm diameter) self-organized on GaAs (311)B substrates

Applied Physics Letters

Volumn 65, Issue 4, 1994, Pages 457-459

  Nötzel, Richard ^a   Temmyo, Jiro ^a   Kamada, Hidehiko ^a   Furuta, Tomofumi ^a   Tamamura, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; EPITAXIAL GROWTH; EXCITONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; EXCITATION SPECTROSCOPY; INDIUM GALLIUM ARSENIDE; METALORGANIC VAPOR PHASE EPITAXY; QUANTUM DISKS;

PHOTOLUMINESCENCE;

EID: 0028461636     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.113021     Document Type: Article

References (15)