C-V and I-V characteristics of a MOSFET with si-implanted Gate-SiO2

IEICE Transactions on Electronics

Volumn E77-C, Issue 6, 1994, Pages 952-959

  Ohzone, Takashi ^a   Hori, Takashi ^a  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK PARAMETERS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HYSTERESIS; INTERFACES (MATERIALS); ION IMPLANTATION; PROM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY; SILICON IMPLANTATION; TRAPPING CHARGES;

MOSFET DEVICES;

EID: 0028450002     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)