Volterra series based nonlinear simulation of HBTs using analytically extracted models

Electronics Letters

Volumn 30, Issue 13, 1994, Pages 1098-1100

  Samelis, A ^a   Pehlke, D R ^a   Pavlidis, D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Heterojunction bipolar transistors; Semiconductor device models; Simulation

Indexed keywords

CAPACITANCE; CONVERGENCE OF NUMERICAL METHODS; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; SECOND HARMONIC GENERATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SIMULATION;

HARMONIC BALANCE TECHNIQUE; HETEROJUNCTION BIPOLAR TRANSISTOR; INTERMODULATION DISTORTION; NONLINEAR ANALYSIS; NONLINEAR SIMULATION; PARAMETER EXTRACTION TECHNIQUE; VOLTERRA SERIES;

BIPOLAR TRANSISTORS;

EID: 0028449074     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940694     Document Type: Article

References (3)

1. Bussgang, J. J., Ehrman, L., and Graham, J. W.: ‘Analysis of nonlinear systems with multiple inputs’, Proc. IEEE, 1974, 62, (8), pp. 1088-1119
2. Samelis, A., and Pavlidis, D.: ‘Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistors’, IEEE Trans., 1992, MTT-40, (12), pp. 2374-2380
3. Pehlke, D. R., and Pavlidis, D.: ‘Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data’, IEEE Trans., 1992, MTT-40, (12), pp. 2367-2373