Porosity superlattices: a new class of Si heterostructures

Journal of Physics D: Applied Physics

Volumn 27, Issue 6, 1994, Pages 1333-1336

  Berger, M G ^a   Dieker, C ^a   Thonissen M ^a   Vescan, L ^a   Luth H ^a   Munder H ^a   Theiss, W ^b   Wernke, M ^b   Grosse, P ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LAYER THICKNESS; POROSITY SUPERLATTICES; REFLECTANCE SPECTROSCOPY; SILICON HETEROSTRUCTURES;

ELECTRIC CURRENTS; EMISSION SPECTROSCOPY; ETCHING; PHOTOLUMINESCENCE; POROSITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0028448750     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/27/6/035     Document Type: Article

References (9)

1. Uhiir A 1956 Belt Syst. Tech. J. 35 333
2. Canham L T 1990 Appl. Phys. Lett, 57 1046
3. Halimaoui A, Oules C, Bomchil G, Bsiesy A, Gaspard F, Herino R, Ligeon M and Muller F 1991 Appl. Phys, Lett. 59 304
4. Richter A, Steiner P, Kozlowski F and Lang W 1991 IEEE Electron. Device Lett. 12 691
5. Bressers P M M C, Knappen I W J, Meulenkamp E A and Kelly J J 1992 Appl. Phys. Leu. 61 108
6. Canham L T, Leong W Y, Beale M I J, Cox T I and Taylor L 1992 Appl. Phys. Lett. 61 2563
7. Mauckner G, Walter T, Baier T, Ttionk K and Sauer R 1993 Mat. Res. Soc. Symp. Proc. 283 109
8. Bruggeman DAG 1935 Ann. Phys. 24 636
9. Theiß W, Grosse P, Münder H, Lüth H, Herino R and Ligeon M 1993 Mat. Res. Soc. Symp. Proc. 283 215