110-GHz, 50%-efficiency mushroom- mesa waveguide p-i-n photodiode for a 1.55-μm wavelength

IEEE Photonics Technology Letters

Volumn 6, Issue 6, 1994, Pages 719-721

  Nagatsuma, T ^a   Yaita, M ^a   Muramoto, Y ^a   Itaya, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CLADDING (COATING); EFFICIENCY; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; HETEROJUNCTIONS; OPTICAL WAVEGUIDES; PHOTODETECTORS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

AUTOMATIC CLEAVING MACHINE; CLADDING LAYERS; CONTACT RESISTANCE; CROSS SECTIONAL PHOTOGRAPH; ELECTRICAL BANDWIDTH; MULTIMODE WAVEGUIDE PIN PHOTODIODES; MUSHROOM MESA STRUCTURE; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; WAVELENGTH;

PHOTODIODES;

EID: 0028447888     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.300173     Document Type: Article

References (10)

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