Study of SEUs generated by high energy ions

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 601-606

  Dreute, J ^a   Rocher H ^a   Heinrich, W ^b   Harboe Sarensen, R ^b   Adams, L ^c   Schardt, D ^c  

^a UNIVERSITY OF SIEGEN   (Germany)

^b EUROPEAN SPACE AGENCY   (Netherlands)

^c GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; HIGH ENERGY PHYSICS; IONS; MOS DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SUBSTRATES; TRANSISTORS;

CHARGE COLLECTION DEPTH; HIGH ENERGY IONS; MICROPROBE; SINGLE EVENT UPSET; SRAMS; TILT ANGLE; TILT DIRECTION;

RADIATION EFFECTS;

EID: 0028447319     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299806     Document Type: Article

References (5)

1. J. Dreute, W.Heinrich, H. Röcher, R. Harboe-Sørensen, L. Adams, D. Schardt, and J. Vetter. “Investigation of Single Event Effects of High Energetic Heavy Ions”. In Proceedings of RADECS 91, La Grande-Motte, France, IEEE Cat. No. 91th0400-2, pages 505-508, 9 1991.
2. S. Metzger, J. Dreute, W. Heinrich, H. Röcher, B. E. Fischer, R. Harboe-Sørensen, and L. Adams. “Heavy Ion Microscopy of Single Event Upsets in CMOS SRAMS”. In Proceedings of RADECS 93, 9 1993.
3. T.L. Criswell, D.L. Oberg, J.S. West, P.R. Measel, and W.E. Wilson. “Measurements of SEU Thresholds and Cross Sections at Fixed Angles”. IEEE Trans. Nucl. Sei., NS-34, No. 6, 12 1987.
4. W. Trakowski, B. Schöfer, J. Dreute, S. Sonntag, J. Beer, C. Brechtmann, H. Drechsel, and W. Heinrich. Nucl. Instr. Meth., 225:92, 1984.
5. T.L. Criswell, P.R. Measel, and K.L. Wahlin. “Single Event Upset Testing With Relativistic Heavy Ions”. IEEE Trans. Nucl. Sci., NS-31:1559-1561, 1984.