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Volumn 41, Issue 3, 1994, Pages 425-431

Neutron, Proton, and Gamma Irradiations of Silicon Detectors CERN Detector R&D Collaboration RD2

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; COLLIDING BEAM ACCELERATORS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELEMENTARY PARTICLE SOURCES; GAMMA RAYS; NEUTRONS; PERFORMANCE; PROTONS; RADIATION DAMAGE; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS;

EID: 0028446645     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299779     Document Type: Article
Times cited : (20)

References (12)
  • 1
    • 0042899009 scopus 로고
    • The radiation field in and around hadron collider detectors
    • G.R. Stevenson, A. Fassò, A. Ferrari and P. Sala, “The radiation field in and around hadron collider detectors", IEEE Trans. Nucl. Sci., Vol. NS-39, p. 1712, 1992.
    • (1992) IEEE Trans. Nucl. Sci. , vol.NS-39 , pp. 1712
    • Stevenson, G.R.1    Fass, A.2    Ferrari, A.R.3    Sala, P.4
  • 3
    • 84914031427 scopus 로고
    • Measurements of possible type inversion in silicon junction detectors
    • Sept.
    • Z. Li and H.W. Kraner, “Measurements of possible type inversion in silicon junction detectors", BNL 46210, Sept. 1991.
    • (1991) BNL 46210
    • Li, Z.1    Kraner, H.W.2
  • 5
    • 24244463739 scopus 로고
    • Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors
    • F. Lemeilleur, M. Glaser, E.H.M. Heijne, P. Jarron, E. Occelli and J. Rioux, “Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors", Nucl. Phys. B (Proc. Suppl.) Vol. 32, p. 415, 1993.
    • (1993) Nucl. Phys. B (Proc. Suppl.) , vol.32 , pp. 32
    • Lemeilleur, F.1    Glaser, M.2    Heijne, E.H.M.3    Jarron, P.4    Occelli, E.5    Rioux, J.6
  • 9
    • 0003497113 scopus 로고
    • Non-ionizing energy deposition in silicon for radiation damage studies
    • Oct.
    • A. Van Ginneken, “Non-ionizing energy deposition in silicon for radiation damage studies", Fermi Lab. internal report FN-522, Oct. 1989.
    • (1989) Fermi Lab. internal report FN-522
    • Van Ginneken, A.1
  • 11
    • 84939711191 scopus 로고
    • Annealing behaviour of capacitance-voltage voltage characteristics at low temperature
    • TN/7, Sept.
    • S. Sotthibandhu, “Annealing behaviour of capacitance-voltage voltage characteristics at low temperature", CERN internal report RD-20, TN/7, Sept. 1992.
    • (1992) CERN internal report RD-20
    • Sotthibandhu, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.