The Effect of Body Resistance on the Breakdown Characteristics of SOI MOSFET’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 6, 1994, Pages 1063-1066

  Suh, Dongwook ^a   Fossum, Jerry G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE MEASUREMENT;

BODY RESISTANCE; DRAIN SOURCE BREAKDOWN; HOLDING VOLTAGE; SNAPBACK VOLTAGE;

MOSFET DEVICES;

EID: 0028446244     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293322     Document Type: Article

References (5)

1. K. K. Young and J. A. Barnes, “Avalanche-induced drain-source break-down in silicon-on-insulator n-MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 426-431, Apr. 1988.
2. J.-Y. Choi and J. G. Fossum, “Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 38, pp. 1384-1391, June 1991.
3. J. M. Hwang, H. Lu, Y. D. Sheu, W. Bailey, P. Mei, and G. Pollack, “Premature breakdown in non-fully depleted SOI/MOSFET’s with body-tied-to-source structure,” IEEE Int. SOI Conf., pp. 34-35, Oct. 1991.
4. F. C. Hsu, P. K. Ko, S. Tam, C. Hu, and R. S. Muller, “An analytical breakdown model for short-channel MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1735-1740, Nov. 1982.
5. D. Suh and J. G. Fossum, unpublished work, 1993.