Double-Diffused Graded SiGe-Base Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 41, Issue 6, 1994, Pages 1013-1018

  Vook, Dietrich ^a   Kamins, Theodore I ^a   Burton, Gregory ^a   Vande Voorde, P J ^a   Wang, H H ^a   Coen, R ^a   Lin, J ^a   Pettengill, D F ^a   Yu, P K ^a   Rosner, S J ^a   Turner, J E ^a   Laderman, S S ^a   Fu, Horng Sen ^a   Wang, Albert S ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

COLLECTOR-EMITTER BREAKDOWN VOLTAGE; CUTOFF FREQUENCIES; HOMOJUNCTION BIPOLAR TECHNOLOGY; SINGLE POLYSILICON DOUBLE DIFFUSED PROCESS;

BIPOLAR TRANSISTORS;

EID: 0028445047     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293315     Document Type: Article

References (23)

1. C. A. King, J. L. Hoyt, C. M. Gronet, J. F. Gibbons, M. P. Scott, and J. Turner, “Silicon/silicon-germanium heterojunction bipolar transistors produced by limited reaction processing,” IEEE Electron Device Lett., vol. 10, pp. 52-54, Jan. 1989.
2. G. L. Patton, J. H. Comfort, B. S. Meyerson, E. F. Crabbe, G. J. Scilla, E. de Fresart, J. M. C. Stork, J. Y.-C. Sun, D. L. Harame, and J. N. Burghartz, “75-GHz fT SiGe-base heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 11, pp. 171-173, Apr. 1990.
3. T. I. Kamins, K. Nauka, J. B. Kruger, J. L. Hoyt, C. A. King, D. B. Noble, C. M. Gronet, and J. F. Gibbons, “Small-geometry, high-performance, Si-Si1-x Gex heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 10, pp. 503-505, Nov. 1989.
4. T. I. Kamins, K. Nauka, L. H. Camnitz, J. B. Kruger, J. E. Turner, S. J. Rosner, M. P. Scott, J. L. Hoyt, C. A. King, D. B. Noble, and J. F. Gibbons, “High frequency Si/Sii-xGex heterojunction bipolar transistors,” 1989 IEDM, Washington, DC, Dec. 1989, paper 27.3, pp. 647-650.
5. G. L. Patton, J. M. C. Stork, J. H. Comfort, E. F. Crabbe, B. S. Meyerson, D. L. Harame, and J. Y.-C. Sun, “SiGe-base heterojunction bipolar transistors: physics and design issues,” IEDM Tech. Dig., pp. 13-16, 1990.
6. J. H. Comfort, E. F. Crabbe, J. D. Cressler, W. Lee, J. Y.-C. Sun, J. Malinowski, M. D’Agostino, J. N. Burghartz, J. M. C. Stork, and B. S. Meyerson, “Single crystal emitter cap for epitaxial Si and SiGe-base transistors,” IEDM Tech. Dig., pp. 857-860, 1991.
7. D. B. Noble, J. L. Hoyt, W. D. Nix, J. F. Gibbons, S. S. Laderman, J. E. Turner, and M. P. Scott, “The effect of oxygen on the thermal stability of Sii_xGex strained layers,” Appl. Phys. Lett., vol. 58, pp. 1536-1538, Apr. 1991.
8. P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, R. D. Jacowitz, and T. I. Kamins, “Comparison of boron diffusion in Si and strained Sii-xGex epitaxial layers,” Appl. Phys. Lett., vol. 62, pp. 612-614, Feb. 1993.
9. E. F. Crabbe’, J. H. Comfort, W. Lee, J. D. Cressler, B. S. Meyerson, A. C. Megdanis, J. Y.-C. Sun, and J. M. C. Stork, “73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters,” IEEE Electron Device Lett., vol. 13, pp. 259-261, May 1992.
10. Q. M. Zhang, G.-L. Tan, W. T. Moore, J. M. Xu, “Effects of displaced p-n junction of heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 2430-2436, Nov. 1992.
11. E. J. Prinz, P. M. Garone, P. V. Schwartz, X. Xiao, and J. C. Sturm, “The effect of base-emitter spacers and strain-dependent densities of states in Si/Sii-xGex/Si heterojunction bipolar transistors,” IEDM Tech. Dig., 639-642, 1989.
12. E. Ganin, T. C. Chen, J. M. C. Stork, B. S. Meyerson, J. D. Cressler, G. Scilla, J. Warnock, D. L. Harame, G. L. Patton, and T. H. Ning, “Epitaxial-base double-poly self-aligned bipolar transistors,” IEDM Tech. Dig., pp. 603-606, 1990.
13. J. Kirchgessner, J. Teplik, V. Ilderem, D. Morgan, R. Parmar, S. R. Wilson, J. Freeman, C. Tracy and S. Cosentino, “An advanced 0.4 pm BICMOS technology for high performance ASIC applications,” IEDM - Tech. 97-99, 1991.
14. W. M. Huang, C. I. Drowley, P. J. Vande Voorde, D. Pettengill, J. E. Turner, A. K. Kapoor, C.-H. Lin, G. Burton, S. J. Rosner, K. Brigham, H. -S. Fu, S.-Y. Oh, M. P. Scott, S.-Y. Chiang, and A. Wang, “A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts,” IEEE Electron Device. Lett., vol. 11, 412-414, 1990.
15. D. D. Tang, T.-C. Chen, T. T. Chuang, J. D. Cressler, J. Warnock, G.-P. Li, M. R. Polcari, M. B. Ketchen and T. H. Ning, “The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, 1703-1710, 1989.
16. D. J. Meyer and T. I. Kamins, “The deposition of Si-Ge strained layers from GeH4, SiH2Cl2, SiH4and Si2H6,” Thin Solid Films, vol. 222, 30-33, 1992.
17. T. I. Kamins, “Chemical vapor deposition in Sii_xGex alloys,” Proc. 12th Int. Conf. on Chemical Vapor Deposition, The Electrochemical
18. T. I. Kamins, D. W. Vook, P. K. Yu, and J. E. Turner, “Kinetics of selective epitaxial deposition of Sii-xGex, “ Appl. Phys. Lett., vol. 61, 1992.
19. T. I. Kamins, “Pattern sensitivity of selective Sii_xGex chemical vapor deposition: Pressure dependence,” J. Appl. Phys., vol. 74, pp. 5799-5802, Nov. 1993.
20. P. E. Cottrell, Z. Yu, “Velocity saturation in the collector of Si/SiGe/Si HBT’s,” IEEE Electron Device Lett., vol. 11, pp. 431-433, Oct. 1990.
21. S. Tiwari, “A new effect at high current in heterostructure bipolar transistors,” IEEE Electron Device Lett., vol. 9, pp. 142-144, Mar. 1988.
22. E. O. Johnson, “Physical limitations on frequency and power parameters of RCA 1965.
23. L. H. Camnitz and N. Moll, “An analysis of the cutoff-frequency behavior of microwave heterostructure bipolar transistors,” in Compound Semiconductor Transistors, Sandip Tiwari, Ed. New York: IEEE Press, 1993, pp. 41-42.